LMP2165RF
Features
- RDS(ON) =65mΩ@VGS = -4.5V
- Improved dv/dt capability
- Fast switching
- Suit for -1.8V Gate Drive Applications
- Green Device Available
- SOT-23-6L package design
These devices are particularly suited for high efficiency fast switching applications.
Product Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
Applications
- Notebook
- Load Switch
- Hand-held Instruments
Pin Configuration LMP2165RF (SOT-23-6L)
Top Views
Pin
Description
Drain
Drain
Gate
Source
Drain
Drain
Notice: The information in this document is subject to change without notice.
Email:amy@lfc-semi. .lfc-semi.
Ordering Information
Part Number LMP2165RF
P/N LMP2165
Rev. 1.0
PKG Code R
Pb Free Code...
