LMN7002KTFF
Features
- 60V/0.5A, RDS(ON) =3.0Ω@VGS = 10V
- 60V/0.4A, RDS(ON) =4.0Ω@VGS = 4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- ESD Protection (2KV) Diode design-in
- DFN1006-3L package design
These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications.
Product Description
LMN7002K, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
Applications
- Drivers:Relays,Solenoids,Lamps,Hammers, Display, Memories, Transistors, etc.
- High saturation current capability. Direct Logic-Level Interface: TTL/CMOS
- Battery Operated Systems
- Solid-State Relays
Pin Configuration LMN7002KTFF (DFN1006-3L)
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Pin
Description
Gate
Source
Drain
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