LMN7002K
Features
- 60V/0.5A, RDS(ON) =2.4Ω@VGS = 10V
- 60V/0.3A, RDS(ON) =3.0Ω@VGS = 4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- ESD Protection (2KV) Diode design-in
- SOT-23 package design
These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications.
Product Description
LMN7002K, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
Applications
- Drivers:Relays,Solenoids,Lamps,Hammers, Display, Memories, Transistors, etc.
- High saturation current capability. Direct Logic-Level Interface: TTL/CMOS
- Battery Operated Systems
- Solid-State Relays
Pin Configuration LMN7002KJZF (SOT-23)
Top Views
Pin
Description
Gate
Source
Drain
Notice: The information...
