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LMN3112Z - 30V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

MB / VGA / Vcore DC-DC Converters Power Management Functions Pin Configuration LMN3112ZF (DFN3X3-8L) Pin 1,2,3 4 5,6,7,8 Description Sour

Key Features

  • 30V, 12.6A, RDS(ON)=10mΩ@VGS=10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS guaranteed.
  • Green Device Available been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching.

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Datasheet Details

Part number LMN3112Z
Manufacturer LFC semi
File Size 461.88 KB
Description 30V N-Channel MOSFET
Datasheet download datasheet LMN3112Z Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LMN3112ZF Rev. 1.0 LMN3112Z 30V N-Channel MOSFET Features  30V, 12.6A, RDS(ON)=10mΩ@VGS=10V  Improved dv/dt capability  Fast switching  100% EAS guaranteed  Green Device Available been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.