LMN3112S
Features
- 30V, 10.6A, RDS(ON)=12mΩ@VGS=10V
- Improved dv/dt capability
- Fast switching
- 100% EAS guaranteed
- Green Device Available been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
These devices are well suited for high efficiency fast switching applications.
Product Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has
Applications
- MB / VGA / Vcore
- DC-DC Converters
- Power Management Functions
Pin Configuration
LMN3112SF (SOP-8L)
Pin 1,2,3
4 5,6,7,8
Description
Source Gate Drain
Notice: The information in this document is subject to change without notice.
Ordering Information
Part Number LMN3112SF
P/N LMN3112
Rev. 1.0
Ordering Information
PKG code
Pb Free code
Package SOP-8
Quantity 4000 PCS
Marking Information
Part Marking...
