LMN22N10XF
Features
- 100V,45A, RDS(ON) <22mΩ@VGS = 10V
- Improved dv/dt capability
- Fast switching
- 100% EAS guaranteed
- Green Device Available
- DFN5X6-8L package design
These devices are well suited for high efficiency fast switching applications.
Product Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
Applications
- Networking
- Load Switch
- LED applications
Pin Configuration LMN22N10XF (DFN5X6-8L)
Bottom View
Pin
Description
Source
Source
Source
Gate
Drain
Drain
Drain
Drain
Notice: The information in this document is subject to change without notice.
Email:amy@lfc-semi. .lfc-semi.
Ordering Information
Part Number LMN22N10XF
P/N...
