LMN22N10SF
Features
- RDS(ON) = 22mΩ@VGS = 10V
- RDS(ON) = 32mΩ@VGS = 4.5V
- Improved dv/dt capability
- Fast switching
- Green Device Available
- SOP-8 package design
These devices are well suited for high efficiency fast switching applications.
Product Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
Pin Configuration
LMN22N10SF (SOP-8)
Applications
- Networking
- Load Switch
- LED applications
Pin
Description
Source
Source
Source
Gate
Drain
Drain
Drain
Drain
Notice: The information in this document is subject to change without notice.
Email:amy@lfc-semi. .lfc-semi.
Ordering Information
Part Number LMN22N10SF
P/N...
