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KS2468UA2 - Dual N-Channel Advanced Power MOSFET

General Description

D1 G2 Pin1 S2 D1 D2 S1 G1 D2 Pin1 SDFN2020 DP1 D1 D2 G1 G2 Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Conti

Key Features

  • 20V/6A, RDS (ON) =26mΩ(Typ. )@VGS=4.5V RDS (ON) =36mΩ(Typ. )@VGS=2.5V.
  • Low RDS (ON).
  • Super High Dense Cell Design.
  • Reliable and Rugged.

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Datasheet Details

Part number KS2468UA2
Manufacturer Kwansemi
File Size 503.45 KB
Description Dual N-Channel Advanced Power MOSFET
Datasheet download datasheet KS2468UA2 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features • 20V/6A, RDS (ON) =26mΩ(Typ.)@VGS=4.5V RDS (ON) =36mΩ(Typ.)@VGS=2.5V • Low RDS (ON) • Super High Dense Cell Design • Reliable and Rugged Applications • Power Management • Battery Protection KS2468UA2 Dual N-Channel Advanced Power MOSFET Pin Description D1 G2 Pin1 S2 D1 D2 S1 G1 D2 Pin1 SDFN2020 DP1 D1 D2 G1 G2 Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=4.