KS2310HB - Single P-Channel Advanced Power MOSFET

Product Overview

Datasheet Details

Part number	KS2310HB
Manufacturer	Kwansemi
File Size	507.17 KB
Description	Single P-Channel Advanced Power MOSFET
Datasheet	KS2310HB Datasheet
Additional preview pages of the KS2310HB datasheet.

Product details

Description

D D D D G S S pin1 S SOP8 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=-4.5V) PD Maximum Power Dissipation RqJC ③ RqJA Thermal Resistance-Junction to Case Thermal Resistance-

Features

-20V/-14A, RDS (ON) =7mΩ(Typ. )@VGS=-4.5V RDS (ON) =9mΩ(Typ. )@VGS=-2.5V RDS (ON) =12mΩ(Typ. )@VGS=-1.8V.
Low RDS (ON).
Super High Dense Cell Design.
Reliable and Rugged.

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Published: Nov 12, 2025 |