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SI4953DY - Dual P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-30V.
  • ID =-4.9 A (VGS =-10V).
  • RDS(ON) ＜ 53mΩ (VGS =-10V).
  • RDS(ON) ＜ 95mΩ (VGS =-4.5V) S1 S2 +0.04 0.21 -0.02 SOP-8 G1 G2 MOSFET 1.50 0.15 1 Source1 2 Gate1 3 Source2 4 Gate2 5 Drain2 6 Drain2 7 Drain1 8 Drain1 D1 D1 D2 D2.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance. Junction- to-Ambient Junction Temperature Junction St.

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SMD Type Dual P-Channel MOSFET SI4953DY (KI4953DY) ■ Features ● VDS (V) =-30V ● ID =-4.9 A (VGS =-10V) ● RDS(ON) ＜ 53mΩ (VGS =-10V) ● RDS(ON) ＜ 95mΩ (VGS =-4.5V) S1 S2 +0.04 0.21 -0.02 SOP-8 G1 G2 MOSFET 1.50 0.15 1 Source1 2 Gate1 3 Source2 4 Gate2 5 Drain2 6 Drain2 7 Drain1 8 Drain1 D1 D1 D2 D2 ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Junction Storage Temperature Range Ta = 25 ℃ Ta = 70 ℃ Ta = 25 ℃ Ta = 70 ℃ Symbol VDS VGS ID IDM PD RthJA TJ Tstg Rating -30 ±20 -4.9 -3.9 -30 2 1.3 62.5 150 -55 to 150 Unit V A W ℃/W ℃ www.kexin.com.