Datasheet4U Logo Datasheet4U.com

SI4410DY - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 30V.
  • ID = 10 A (VGS = 10V).
  • RDS(ON) ＜ 13.5mΩ (VGS = 10V).
  • RDS(ON) ＜ 20mΩ (VGS = 4.5V) +0.04 0.21 -0.02 D MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain G S.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note.1) Pulsed Drain Current Power Dissipation Thermal Resistance. Junction- to-Ambient Thermal Resistance. Junction- to-Case Junction Temperatur.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SI4410DY N-channel FET NXP
Si4410DY Single N-Channel MOSFET Fairchild Semiconductor
Si4410DY N-Channel MOSFET Vishay
Si4410DY Power MOSFET International Rectifier
Si4410DYPbF Power MOSFET International Rectifier

Other Datasheets by Kexin Semiconductor

Part Number Description
SI4435DY P-Channel MOSFET
SI4490DY-HF N-Channel MOSFET
SI4558DY Complementary Power Trench MOSFET
SI4634DY N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type N-Channel MOSFET SI4410DY (KI4410DY) SOP-8 ■ Features ● VDS (V) = 30V ● ID = 10 A (VGS = 10V) ● RDS(ON) ＜ 13.5mΩ (VGS = 10V) ● RDS(ON) ＜ 20mΩ (VGS = 4.5V) +0.04 0.21 -0.02 D MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note.1) Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range TA=25℃ TA=70℃ TA=25℃ TA=70℃ (Note.1) Note.1:Surface Mounted on FR4 Board, t ≤ 10 sec. Symbol VDS VGS ID IDM PD RthJA RthJC TJ Tstg Rating 30 ±20 10 8 50 2.5 1.6 50 22 150 -55 to 150 Unit V A W ℃/W ℃ www.kexin.com.