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SI2356DS - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 40V.
  • ID = 4.3 A (VGS = 10V).
  • RDS(ON) ＜ 51mΩ (VGS = 10V).
  • RDS(ON) ＜ 54mΩ (VGS = 4.5V).
  • RDS(ON) ＜ 70mΩ (VGS = 2.5V) D +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 0-0.1 +0.1 0.68 -0.1 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain G S.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Tc=25℃ Continuous Drain Current (TJ.

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SMD Type N-Channel MOSFET SI2356DS (KI2356DS) MOSFET ■ Features ● VDS (V) = 40V ● ID = 4.3 A (VGS = 10V) ● RDS(ON) ＜ 51mΩ (VGS = 10V) ● RDS(ON) ＜ 54mΩ (VGS = 4.5V) ● RDS(ON) ＜ 70mΩ (VGS = 2.5V) D +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 0-0.1 +0.1 0.68 -0.1 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Tc=25℃ Continuous Drain Current (TJ = 150℃) Tc=70℃ Ta=25℃ Pulsed Drain Current (t=100us) Ta=70℃ Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.