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SI2324DS - N-Channel Enhancement MOSFET

Key Features

  • s.
  • VDSS = 100V.
  • ID = 2.3 A (VGS = 10V).
  • RDS(ON) ＜ 234mΩ (VGS = 10V).
  • RDS(ON) ＜ 267mΩ (VGS = 6V).
  • RDS(ON) ＜ 278mΩ (VGS = 4.5V) D G S +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.68 -0.1.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current TJ =150℃.

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SSMMDD TTyyppee MOSFET IC N-Channel Enhancement MOSFET SI2324DS (KI2324DS) ■ Features ● VDSS = 100V ● ID = 2.3 A (VGS = 10V) ● RDS(ON) ＜ 234mΩ (VGS = 10V) ● RDS(ON) ＜ 267mΩ (VGS = 6V) ● RDS(ON) ＜ 278mΩ (VGS = 4.5V) D G S +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.68 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current TJ =150℃ *1 Pulsed Drain Current TA=25℃ TA=70℃ Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range *1 Surface Mounted on 1” x 1” FR4 Board.