Datasheet4U Logo Datasheet4U.com

SI2318DS - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 40V.
  • ID = 3.9 A (VGS = 10V).
  • RDS(ON) ＜ 45mΩ (VGS = 10V).
  • RDS(ON) ＜ 58mΩ (VGS = 4.5V) +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 G1 S2 3D 0-0.1 +0.1 0.38 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 MOSFET Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Ta=25℃ Ta=70℃.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
Si2318DS N-Channel 40-V (D-S) MOSFET Vishay
SI2318DS-T1-GE3 N-Channel MOSFET VBsemi
SI2318 N-Channel MOSFET HOTTECH
SI2318A N-Channel MOSFET MCC
SI2318A SOT-23-3L Plastic-Encapsulate MOSFET UMW

Other Datasheets by Kexin Semiconductor

Part Number Description
SI2318CDS N-Channel MOSFET
SI2312DS N-Channel Enhancement MOSFET
SI2314EDS N-Channel Enhancement MOSFET
SI2300 N-Channel MOSFET
SI2301 P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type N-Channel MOSFET SI2318DS (KI2318DS) ■ Features ● VDS (V) = 40V ● ID = 3.9 A (VGS = 10V) ● RDS(ON) ＜ 45mΩ (VGS = 10V) ● RDS(ON) ＜ 58mΩ (VGS = 4.5V) +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 G1 S2 3D 0-0.1 +0.1 0.38 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 MOSFET Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Ta=25℃ Ta=70℃ Power Dissipation Ta=25℃ Ta=70℃ Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA RthJC TJ Tstg 5 Sec Steady State 40 ±20 3.9 3 3.1 2.4 16 1.