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SI2312DS - N-Channel Enhancement MOSFET

Key Features

  • s.
  • VDS (V) = 20V.
  • ID = 4.9 A (VGS =4.5V).
  • RDS(ON) ＜ 33mΩ (VGS = 4.5V).
  • RDS(ON) ＜ 40mΩ (VGS = 2.5V).
  • RDS(ON) ＜ 51mΩ (VGS = 1.8V) G1 S2 3D +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 MOSFET Unit: mm 0.1 +0.05 -0.01 1.Gate 2.Source 3.Drain 0-0.1 +0.1 0.38 -0.1.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current.

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SMD Type N-Channel Enhancement MOSFET SI2312DS (KI2312DS) ■ Features ● VDS (V) = 20V ● ID = 4.9 A (VGS =4.5V) ● RDS(ON) ＜ 33mΩ (VGS = 4.5V) ● RDS(ON) ＜ 40mΩ (VGS = 2.5V) ● RDS(ON) ＜ 51mΩ (VGS = 1.8V) G1 S2 3D +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 MOSFET Unit: mm 0.1 +0.05 -0.01 1.Gate 2.Source 3.Drain 0-0.1 +0.1 0.38 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current *1 Ta=25℃ Ta=70℃ Pulsed Drain Current *2 Avalanche Current *2 Single Avalanche Energy L=0.1mH Power Dissipation *1 Ta=25℃ Ta=70℃ Thermal Resistance.Junction- to-Ambient *1 t≤5 sec Steady State Thermal Resistance.