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SI2306DS - 30V N-Channel MOSFET

Key Features

  • RDS(ON) ＜ 57mΩ (VGS =-10V).
  • RDS(ON) ＜ 94 mΩ (VGS =-4.5V) D G S +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.1 0.38 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 11.. BGasaete 22.. ESmiotutrecre 33.. cDolrlaeicntor Absolute Maximum Ratings Ta = 25 Drain-source voltage Gate-source voltage Parameter Continuous drain current (TJ = 150 ).
  • 1,2 TA=25 -- TA=70 Pulsed drain current Continuous source cur.

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SSMMDD TTyyppee N-Channel 30-V (D-S) MOSFET SI2306DS (KI2306DS) MOSFIECT Features ● RDS(ON) ＜ 57mΩ (VGS =-10V) ● RDS(ON) ＜ 94 mΩ (VGS =-4.5V) D G S +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.1 0.38 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 11.. BGasaete 22..ESmiotutrecre 33..cDolrlaeicntor Absolute Maximum Ratings Ta = 25 Drain-source voltage Gate-source voltage Parameter Continuous drain current (TJ = 150 ) *1,2 TA=25 -- TA=70 Pulsed drain current Continuous source current (diode conduction) *1,2 Maximum Power dissipation *1,2 -- TA=25 TA=70 Operating junction and storage temperature range Maximum Junction to Ambienta t 5 sec Steady State *1 Surface Mounted on FR4 Board.