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SI1029X - Complementary MOSFET

Key Features

  • s.
  • N-Channel VDS = 60V, ID = 500mA RDS(ON) < 1.4 Ω @ VGS=10V RDS(ON) < 3 Ω @ VGS=4.5V.
  • P-Channel VDS = -60V, ID = -500mA RDS(ON) < 4 Ω @ VGS=-10V RDS(ON) < 8 Ω @ VGS=-4.5V S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 Top View SOT-563 0.20 ± 0.10 1.20 ± 0.10 1.60 ± 0.10 4 3 5 2 6 1 Unit:mm 0.05 (max) 0.22 ± 0.05 0.50 ± 0.05 1.60 ± 0.10 7° REF. 0.525 ~ 0.60 0.125 ± 0.035 7° REF.
  • Absolute Maximum Ratings (TA = 25℃ Unless otherwise specified) Parameter Symbol N-Channel.

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SMD Type MOSFET Complementary MOSFET SI1029X ■ Features ● N-Channel VDS = 60V, ID = 500mA RDS(ON) < 1.4 Ω @ VGS=10V RDS(ON) < 3 Ω @ VGS=4.5V ● P-Channel VDS = -60V, ID = -500mA RDS(ON) < 4 Ω @ VGS=-10V RDS(ON) < 8 Ω @ VGS=-4.5V S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 Top View SOT-563 0.20 ± 0.10 1.20 ± 0.10 1.60 ± 0.10 4 3 5 2 6 1 Unit:mm 0.05 (max) 0.22 ± 0.05 0.50 ± 0.05 1.60 ± 0.10 7° REF. 0.525 ~ 0.60 0.125 ± 0.035 7° REF.