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KX8N60CF - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 600V.
  • ID = 7.5 A (VGS = 10V).
  • RDS(ON) ＜ 1.2 Ω (VGS = 10V).
  • Fast switching.
  • Improved dv/dt capability D G S 15.87 ±0.20 3.30 ±0.20 TO-220F ±0.20 3.18±0.20 φ ±0.20 2.54 ±0.20 Unit: mm 0.70 ±0.20 6.68 ±0.20 12.42 ±0.20 1.47max 9.75 ±0.20 2.54typ 2.54typ 1 23 0.80 ±0.20 0.50 ±0.20 2.76 ±0.20.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Tc=25℃ Tc=100℃ Pulsed Drain Current A.

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DIP Type N-Channel MOSFET KX8N60CF MOSFET ■ Features ● VDS (V) = 600V ● ID = 7.5 A (VGS = 10V) ● RDS(ON) ＜ 1.2 Ω (VGS = 10V) ● Fast switching ● Improved dv/dt capability D G S 15.87 ±0.20 3.30 ±0.20 TO-220F ±0.20 3.18±0.20 φ ±0.20 2.54 ±0.20 Unit: mm 0.70 ±0.20 6.68 ±0.20 12.42 ±0.20 1.47max 9.75 ±0.20 2.54typ 2.54typ 1 23 0.80 ±0.20 0.50 ±0.20 2.76 ±0.20 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Tc=25℃ Tc=100℃ Pulsed Drain Current Avalanche Current Power Dissipation Tc=25℃ Derate above 25℃ Single Pulsed Avalanche Energy (Note.1) Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note.2) Thermal Resistance.Junction- to-Ambient Thermal Resistance.