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KX6N80F - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 800V.
  • ID = 7 A (VGS = 10V).
  • RDS(ON) ＜ 1.9Ω (VGS = 10V).
  • Low Gate Charge (Typ. 27 nC).
  • Fast switching.
  • 100% Avalanche Tested D 15.87 ±0.20 3.30 ±0.20 TO-220F ±0.20 3.18±0.20 φ ±0.20 2.54 ±0.20 Unit: mm 0.70 ±0.20 6.68 ±0.20 12.42 ±0.20 1.47max 2.54typ 2.54typ 2.76 ±0.20 9.75 ±0.20 0.80 ±0.20 0.50 ±0.20 G S.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Tc=25℃ Tc=100℃ P.

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DIP Type MOSFET N-Channel MOSFET KX6N80F ■ Features ● VDS (V) = 800V ● ID = 7 A (VGS = 10V) ● RDS(ON) ＜ 1.9Ω (VGS = 10V) ● Low Gate Charge (Typ. 27 nC) ● Fast switching ● 100% Avalanche Tested D 15.87 ±0.20 3.30 ±0.20 TO-220F ±0.20 3.18±0.20 φ ±0.20 2.54 ±0.20 Unit: mm 0.70 ±0.20 6.68 ±0.20 12.42 ±0.20 1.47max 2.54typ 2.54typ 2.76 ±0.20 9.75 ±0.20 0.80 ±0.20 0.50 ±0.20 G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Tc=25℃ Tc=100℃ Pulsed Drain Current (Note.1) Power Dissipation - Derate above 25°C Tc=25℃ Single Pulsed Avalanche Energy (Note.2) Repetitive Avalanche Energy (Note.1) Peak Diode Recovery dv/dt (Note.3) Thermal Resistance.Junction- to-Ambient Thermal Resistance.