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KRF7389 - Power MOSFET

Key Features

  • Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current Ta = 25 ID Continuous Drain Current Ta = 70 ID Pulsed Drain Current.
  • 1 IDM Continuous Source Current (Diode Conduction) IS Power Dissipation @Ta= 25 PD @Ta= 70 Gate-to-Source Voltage VGS Single Pulse Avalanche Energy EAS IAR Repetitive Avalanche Energy EAR.

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Full PDF Text Transcription (Reference)

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SMD Type HEXFET Power MOSFET KRF7389 Features Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current Ta = 25 ID Continuous Drain Current Ta = 70 ID Pulsed Drain Current *1 IDM Continuous Source Current (Diode Conduction) IS Power Dissipation @Ta= 25 PD @Ta= 70 Gate-to-Source Voltage VGS Single Pulse Avalanche Energy EAS IAR Repetitive Avalanche Energy EAR Peak Diode Recovery dv/dt *2 dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum Junction-to-Ambient *3 R JA *1 Repetitive rating; pulse width limited by max. junction temperature. *2 N-Channel ISD 4.