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KRF7307 - Power MOSFET

Key Features

  • Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 Sec. Pulse Drain Current, VGS @ 4.5V Ta = 25 ID Continuous Drain Current VGS @ 4.5V Ta = 25 ID Continuous Drain Current VGS @ 4.5V Ta = 70 ID Pulsed Drain Current.
  • 1 IDM Power Dissipation @Ta= 25 PD Linear Derating Factor (PCB Mount) Peak Diode Recovery dv/dt.
  • 2 dv.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type HEXFET Power MOSFET KRF7307 Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 Sec. Pulse Drain Current, VGS @ 4.5V Ta = 25 ID Continuous Drain Current VGS @ 4.5V Ta = 25 ID Continuous Drain Current VGS @ 4.5V Ta = 70 ID Pulsed Drain Current *1 IDM Power Dissipation @Ta= 25 PD Linear Derating Factor (PCB Mount) Peak Diode Recovery dv/dt *2 dv/dt Gate-to-Source Voltage VGS Junction and Storage Temperature Range TJ, TSTG Maximum Junction-to-Ambient*3 R JA *1 Repetitive rating; pulse width limited by max. junction temperature. N-Channel P-Channel 5.7 -4.7 5.2 -4.3 4.1 -3.4 21 -17 2.