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KRF7319 - Power MOSFET

Key Features

  • Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current.
  • 5 Ta = 25 ID Continuous Drain Current.
  • 5 Ta = 70 ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction) IS Power Dissipation @Ta= 25.
  • 4 PD Power Dissipation @Ta= 70.
  • 4 Single Pulse Avalanche Energy EAS Avalanche Current IAR.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type HEXFET Power MOSFET KRF7319 Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current *5 Ta = 25 ID Continuous Drain Current *5 Ta = 70 ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction) IS Power Dissipation @Ta= 25 *4 PD Power Dissipation @Ta= 70 *4 Single Pulse Avalanche Energy EAS Avalanche Current IAR Repetitive Avalanche Energy EAR Peak Diode Recovery dv/dt *2 dv/dt Gate-to-Source Voltage VGS Junction and Storage Temperature Range TJ, TSTG Maximum Junction-to-Ambient *4 R JA *1 Repetitive rating; pulse width limited by max. junction temperature.