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KRF7379 - Power MOSFET

Key Features

  • Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current, VGS @ 10V @ Ta = 25 ID Continuous Drain Current, VGS @ 10V @ Ta = 70 ID Pulsed Drain Current.
  • 1 IDM Power Dissipation @Ta= 25 PD Linear Derating Factor Gate-to-Source Voltage VGS Peak Diode Recovery dv/dt.
  • 2 dv/dt Junction and Storage Temperature Range T.

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SMD Type HEXFET Power MOSFET KRF7379 Features Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current, VGS @ 10V @ Ta = 25 ID Continuous Drain Current, VGS @ 10V @ Ta = 70 ID Pulsed Drain Current *1 IDM Power Dissipation @Ta= 25 PD Linear Derating Factor Gate-to-Source Voltage VGS Peak Diode Recovery dv/dt *2 dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum Junction-to-Ambient *3 R JA *1 Repetitive rating; pulse width limited by max. junction temperature. *2 N-Channel ISD 2.4A, di/dt 73A/ s, VDD V(BR)DSS, TJ 150 P-Channel ISD -1.