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KRF7350 - Power MOSFET

Key Features

  • Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape and Reel ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current Ta = 25 ID Continuous Drain Current Ta = 70 ID Pulsed Drain Current.
  • 1 IDM Power Dissipation @Ta= 25 PD Linear Derating Factor Gate-to-Source Voltage VGS Single Pulse Avalanche Energy.
  • 4 EAS Peak Diode Recovery dv/dt.
  • 2 dv/dt Junction and Storage Temperature Range T.

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SMD Type HEXFET Power MOSFET KRF7350 Features Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape and Reel ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current Ta = 25 ID Continuous Drain Current Ta = 70 ID Pulsed Drain Current *1 IDM Power Dissipation @Ta= 25 PD Linear Derating Factor Gate-to-Source Voltage VGS Single Pulse Avalanche Energy *4 EAS Peak Diode Recovery dv/dt *2 dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum Junction-to-Ambient *3 R JA Junction-to-Drain Lead R JL *1 Repetitive rating; pulse width limited by max. junction temperature. *2 Pulse width 400 s; duty cycle 2%.