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KRF7343 - Power MOSFET

Key Features

  • Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current,VGS@10V , Ta = 25 ID Continuous Drain Current ,VGS@10V , Ta = 70 ID Pulsed Drain Current.
  • 1 IDM Power Dissipation @Ta= 25.
  • 5 PD Power Dissipation @Ta= 70.
  • 5 Gate-to-Source Voltage VGS Single Pulse Avalanche Energy.
  • 3 EAS Avalanche Current IAR.

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Full PDF Text Transcription (Reference)

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SMD Type HEXFET Power MOSFET KRF7343 Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current,VGS@10V , Ta = 25 ID Continuous Drain Current ,VGS@10V , Ta = 70 ID Pulsed Drain Current *1 IDM Power Dissipation @Ta= 25 *5 PD Power Dissipation @Ta= 70 *5 Gate-to-Source Voltage VGS Single Pulse Avalanche Energy *3 EAS Avalanche Current IAR Repetitive Avalanche Energy EAR Peak Diode Recovery dv/dt *2 dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum Junction-to-Ambient *5 R JA *1 Repetitive rating; pulse width limited by max. junction temperature. N-Channel P-Channel 55 -55 4.