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KRF7338 - Power MOSFET

Key Features

  • Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current,VGS@10V , Ta = 25 ID Continuous Drain Current ,VGS@10V , Ta = 70 ID Pulsed Drain Current.
  • 1 IDM Power Dissipation @Ta= 25.
  • 3 PD Power Dissipation @Ta= 70.
  • 3 Linear Derating Factor Gate-to-Source Voltage VGS Junction and Storage Temperature Range TJ, TSTG Maximum Juncti.

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SMD Type HEXFET Power MOSFET KRF7338 Features Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current,VGS@10V , Ta = 25 ID Continuous Drain Current ,VGS@10V , Ta = 70 ID Pulsed Drain Current *1 IDM Power Dissipation @Ta= 25 *3 PD Power Dissipation @Ta= 70 *3 Linear Derating Factor Gate-to-Source Voltage VGS Junction and Storage Temperature Range TJ, TSTG Maximum Junction-to-Ambient *3 R JA Junction-to-Drain Lead R JL *1 Repetitive rating; pulse width limited by max. junction temperature. *2 Pulse width 400 s; duty cycle 2%. *3 Surface mounted on 1 in square Cu board.