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KRF7325 - Power MOSFET

Key Features

  • Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type ICIC HEXFET Power MOSFET KRF7325 Features Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (<1.8mm) Available in Tape & Reel 1: Source 1 2: Gate 1 7,8: Drain 1 3: Source 2 4: Gate 2 5,6: Drain 2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain- Source Voltage VDS Continuous Drain Current, VGS @ -4.5V @ Ta = 25 ID Continuous Drain Current, VGS @ -4.5V @ Ta = 70 ID Pulsed Drain Current *1 IDM Power Dissipation *2 @Ta= 25 PD Power Dissipation *2 @Ta = 70 PD Linear Derating Factor Gate-to-Source Voltage VGS Junction and Storage Temperature Range TJ, TSTG Junction-to-Drain Lead R JL Maximum Junction-to-Ambient *2 R JA *1 Repetitive rating; pulse width limited by max. junction temperature.