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KQB630 - 200V N-Channel MOSFET

Key Features

  • 9A, 200 V. RDS(ON) = 0.4 @ VGS = 10 V Low gate charge (typical 19nC) Low Crss(typical 35pF) Fast switching 100% avalanche tested lmproved dv/dt capability + 5 .2 8 0.2 -0.2 + 8 .7 0.2 -0.2 TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm + 1 .2 7 0.1 -0.1 5.60 + 0 .2 -0.2 5 1.27+0.1 -0.1 0.1max +0.2 2.54-0.2 +0.1 5.08-0.1 0.81+0.1 -0.1 2.54 + 2 .5 4 0.2 -0.2 0.4+0.2 -0.2 1 5 . 2 11Ggaattee 22Ddrraaiinn 33Ssoouurrccee Absolute Maximum Ratings Ta = 25 Parameter Drain to Sou.

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SMD Type TransistIoCrs 200V N-Channel MOSFET KQB630 Features 9A, 200 V. RDS(ON) = 0.4 @ VGS = 10 V Low gate charge (typical 19nC) Low Crss(typical 35pF) Fast switching 100% avalanche tested lmproved dv/dt capability + 5 .2 8 0.2 -0.2 + 8 .7 0.2 -0.2 TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm + 1 .2 7 0.1 -0.1 5.60 + 0 .2 -0.2 5 1.27+0.1 -0.1 0.1max +0.2 2.54-0.2 +0.1 5.08-0.1 0.81+0.1 -0.1 2.54 + 2 .5 4 0.2 -0.2 0.4+0.2 -0.2 1 5 .