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KI3N10DS - N-Channel MOSFET

Key Features

  • ƽ VDS (V) = 100V ƽ ID = 3 A ƽ RDS(ON) ˘ 160 mȍ (VGS = 10V) ƽ RDS(ON) ˘ 170 mȍ (VGS = 4.5V) D +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit : mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.68 -0.1 G S Ƶ Absolute Maximum Ratings (TA = 25ć unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Power Dissipation Therm.

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SMD Type N-Channel MOSFET KI3N10DS TraMnOsiSsFtoErsT Ƶ Features ƽ VDS (V) = 100V ƽ ID = 3 A ƽ RDS(ON) ˘ 160 mȍ (VGS = 10V) ƽ RDS(ON) ˘ 170 mȍ (VGS = 4.5V) D +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit : mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.68 -0.1 G S Ƶ Absolute Maximum Ratings (TA = 25ć unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Power Dissipation Thermal Resistance Junction- to-Ambient (Note 2) Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TJ Tstg Rating 100 ±20 3 20 1.5 100 150 -55 to 150 Unit V A W ć/W ć www.kexin.com.