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KI3055DY - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 60V.
  • ID = 6 A (VGS = 10V).
  • RDS(ON) ＜ 150mΩ (VGS = 10V) D G S +0.04 0.21 -0.02 SOP-8 MOSFET 1.50 0.15 1~3.Source 4.Gate 5~8.Drain.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current (tp ≤ 10 ms) Power Dissipation TA=25℃ (Note.1) (Note.2) Single Pulse Drain.
  • to.
  • Source Avalanche Energy.
  • Starting TJ = 25°C Thermal Resistance. Junction- to-.

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SMD Type N-Channel MOSFET KI3055DY ■ Features ● VDS (V) = 60V ● ID = 6 A (VGS = 10V) ● RDS(ON) ＜ 150mΩ (VGS = 10V) D G S +0.04 0.21 -0.02 SOP-8 MOSFET 1.50 0.15 1~3.Source 4.Gate 5~8.Drain ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current (tp ≤ 10 ms) Power Dissipation TA=25℃ (Note.1) (Note.2) Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C Thermal Resistance.Junction- to-Ambient (Note.1) (Note.2) Thermal Resistance.Junction- to-Case Maximum Lead Temperature for SolderingPurposes (Note.3) Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD EAS RthJA RthJC TL TJ Tstg Rating 60 ±20 6 3 24 2.1 1.5 30 71.4 100 5.