Datasheet4U Logo Datasheet4U.com

KI2314EDS - 20V N-Channel MOSFET

Key Features

  • TrenchFET Power MOSFET ESD Protected: 3000 V +0.1 2.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 1 2 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.1 0.38 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 11.. BGasae te 22.ESmoituterrce 33.. cDollreactionr Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 ).
  • 1 TA = 25 TA = 70 Pulsed Drain Current Avalanche Current.
  • 2 L = 0.1 mH Single Avalanche Energ.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Kexin Semiconductor

Part Number Description
KI2310 N-Channel Enhancement MOSFET
KI2310DS N-Channel MOSFET
KI2312 N-Channel Enhancement MOSFET
KI2312DS 20V N-Channel MOSFET
KI2300 N-Channel FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type Transistors N-Channel 20-V (D-S) MOSFET KI2314EDS Features TrenchFET Power MOSFET ESD Protected: 3000 V +0.1 2.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 1 2 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.1 0.38 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 11..BGasae te 22.ESmoituterrce 33..cDollreactionr Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 )*1 TA = 25 TA = 70 Pulsed Drain Current Avalanche Current*2 L = 0.1 mH Single Avalanche Energy L = 0.1 mH Continuous Source Current (Diode Conduction)*1 Power Dissipation *1 TA = 25 TA = 70 Operating Junction and Storage Temperature Range *1 Surface Mounted on 1"X 1" FR4 Board.