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KDS8958 - Dual N & P-Channel PowerTrench MOSFET

Key Features

  • N-Channel 7.0 A, 30 V RDS(ON) = 0.028 @ VGS = 10 V RDS(ON) = 0.040 @ VGS =4.5V P-Channel -5 A, -30 V RDS(ON) = 0.052 @ VGS =- 10 V RDS(ON) = 0.080 @ VGS =-4.5V Fast switching speed High power and handling capability in a widely used surface mount package Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P- Channel Unit Drain to Source Voltage VDSS 30 30 V Gate to Source Voltage VGS 20 20 V Drain Current Continuous (Note 1a) Drain Current Pulsed 7 ID 20 -5 A -20 A.

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SMD Type TransistIoCrs Dual N & P-Channel PowerTrench MOSFET KDS8958 Features N-Channel 7.0 A, 30 V RDS(ON) = 0.028 @ VGS = 10 V RDS(ON) = 0.040 @ VGS =4.5V P-Channel -5 A, -30 V RDS(ON) = 0.052 @ VGS =- 10 V RDS(ON) = 0.080 @ VGS =-4.5V Fast switching speed High power and handling capability in a widely used surface mount package Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P- Channel Unit Drain to Source Voltage VDSS 30 30 V Gate to Source Voltage VGS 20 20 V Drain Current Continuous (Note 1a) Drain Current Pulsed 7 ID 20 -5 A -20 A Power Dissipation for Single Operation PD 2 W Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) PD 1 W (Note 1c) 0.