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SMD Type
Silicon Schottky Barrier Diode HSB276S
Diodes
Features
High forward current, Low capacitance. HSB276S which is interconnected in series configuration is designed for balanced mixer use. CMPAK package is suitable for high density surface mounting and high speed assembly.
A b s o lu t e M a x im u m R a t in g s T a = 2 5
P a ra m e te r R e v e r s e v o lt a g e A v e r a g e r e c t if ie d c u r r e n t J u n c t io n t e m p e r a t u r e S to ra g e te m p e ra tu re S ym bol VR IO Tj T s tg V a lu e 3 30 125 -5 5 to + 1 2 5 U n it V mA
Electrical Characteristics Ta = 25
Parameter Forward voltage Reverse current Forward current Capacitance Capacitance deviation ESD-Capability (Note 1) Note 1. Failure criterion ; IR 100 A at V R =0.5 V Symbol VF IR IF C ÄC Conditions IF =1.
HSB276S Datasheet
