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HSB276AS - Silicon Schottky Barrier Diode

Features

  • High forward current, Low capacitance. HSB276AS which is interconnected in series configuration is designed for balanced mixer use. CMPAK package is suitable for high density surface mounting and high speed assembly. A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r R e p e titiv e p e a k re v e rs e v o lta g e R e v e rs e v o lta g e A v e ra g e re c tifie d c u rre n t J u n c tio n te m p e ra tu re S to ra g e te m p e ra tu re S ym bol VRRM VR IO Tj T s tg V a lu e 5 3 3.

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Part Number Description Manufacturer
HSB276AS Silicon Schottky Barrier Diode for Balanced Mixer Hitachi Semiconductor
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HSB278S Silicon Schottky Barrier Diode for High Speed Switching Hitachi Semiconductor

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Full PDF Text Transcription

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SMD Type Silicon Schottky Barrier Diode HSB276AS Diodes Features High forward current, Low capacitance. HSB276AS which is interconnected in series configuration is designed for balanced mixer use. CMPAK package is suitable for high density surface mounting and high speed assembly. A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r R e p e titiv e p e a k re v e rs e v o lta g e R e v e rs e v o lta g e A v e ra g e re c tifie d c u rre n t J u n c tio n te m p e ra tu re S to ra g e te m p e ra tu re S ym bol VRRM VR IO Tj T s tg V a lu e 5 3 30 125 -5 5 to + 1 2 5 U n it V V mA Electrical Characteristics Ta = 25 Parameter Forward voltage Reverse current Forward current Capacitance Capacitance deviation ESD-Capability (Note 1) Note 1.
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