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FDC2512 - N-Channel Enhancement MOSFET

Key Features

  • ƽ VDS (V) = 150V ƽ ID = 1.4A (VGS = 10V) ƽ RDS(ON) ˘ 425m¡ (VGS = 10V) ƽ RDS(ON) ˘ 475m¡ (VGS = 6V) D D G D D S ( SOT-23-6 ) 0.4+0.1 -0.1 6 5 4 1 2 3 +0.01 -0.01 +0.2 -0.1  1.6   2.8    8QLW PP           Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous.
  • 1a - Pulsed Power Dissipation.
  • 1a.
  • 1b Thermal Resistance. Junction- to.

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SMD Type N-Channel Enhancement MOSFET FDC2512 (KDC2512) MOSFET Ƶ Features ƽ VDS (V) = 150V ƽ ID = 1.4A (VGS = 10V) ƽ RDS(ON) ˘ 425m¡ (VGS = 10V) ƽ RDS(ON) ˘ 475m¡ (VGS = 6V) D D G D D S ( SOT-23-6 ) 0.4+0.1 -0.1 6 5 4 1 2 3 +0.01 -0.01 +0.2 -0.1  1.6   2.8    8QLW PP           Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous *1a - Pulsed Power Dissipation *1a *1b Thermal Resistance.Junction- to-Ambient *1a Thermal Resistance.Junction- to-Case *1 Junction Temperature Storage Temperature Range Symbol VDS VGS ID PD RthJA RthJC TJ Tstg Rating 150 f20 1.4 8 1.6 0.8 78 30 150 -55 to 150 Unit V A W ć/W ć *1.