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AO4806 - Dual N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 20V.
  • ID = 9.4 A (VGS = 10V).
  • RDS(ON) ＜ 14mΩ (VGS = 10V).
  • RDS(ON) ＜ 15mΩ (VGS = 4.5V).
  • RDS(ON) ＜ 21mΩ (VGS = 2.5V).
  • RDS(ON) ＜ 30mΩ (VGS = 1.8V).
  • ESD Rating: 2000V HBM D1 D2 G1 G2 S1 S2 +0.04 0.21 -0.02 SOP-8 1.50 0.15 1 Source2 2 Gate2 3 Source1 4 Gate1 5 Drain1 6 Drain1 7 Drain2 8 Drain2.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Ta=25℃ Ta.

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Other Datasheets by Kexin Semiconductor

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SMD Type Dual N-Channel MOSFET AO4806 (KO4806) MOSFET ■ Features ● VDS (V) = 20V ● ID = 9.4 A (VGS = 10V) ● RDS(ON) ＜ 14mΩ (VGS = 10V) ● RDS(ON) ＜ 15mΩ (VGS = 4.5V) ● RDS(ON) ＜ 21mΩ (VGS = 2.5V) ● RDS(ON) ＜ 30mΩ (VGS = 1.8V) ● ESD Rating: 2000V HBM D1 D2 G1 G2 S1 S2 +0.04 0.21 -0.02 SOP-8 1.50 0.15 1 Source2 2 Gate2 3 Source1 4 Gate1 5 Drain1 6 Drain1 7 Drain2 8 Drain2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Ta=25℃ Ta=70℃ Power Dissipation Ta=25℃ Ta=70℃ Thermal Resistance.Junction- to-Ambient t ≤ 10s Steady-State Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA RthJC TJ Tstg Rating 20 ±12 9.4 7.5 40 2 1.