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2SK4002 - N-Channel MOSFET

Key Features

  • ƽ VDS (V) = 150V ƽ Max rDS(on) = 56 mȍ at VGS = 10 V, ID = 4.4 A ƽ Max rDS(on) = 71 mȍ at VGS = 6 V, ID = 3.8 A ƽ Max rDS(on) = 75 mȍ at VGS = 4.5 V, ID = 3.7 A ƽ Advanced package and silicon combination for low rDS(on) and high efficiency ƽ Next generation enhanced body diode technol- ogy, engineered for soft recovery S S S G DFN5x6-8(PDFNWB5x6-8L) D D D D Ƶ Absolute Maximum Ratings (TA = 25ć unless otherwise noted) Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage V.

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SMD Type N-Channel MOSFET 2SK4002 TraMnOsiSsFtoErsT Ƶ Features ƽ VDS (V) = 150V ƽ Max rDS(on) = 56 mȍ at VGS = 10 V, ID = 4.4 A ƽ Max rDS(on) = 71 mȍ at VGS = 6 V, ID = 3.8 A ƽ Max rDS(on) = 75 mȍ at VGS = 4.5 V, ID = 3.7 A ƽ Advanced package and silicon combination for low rDS(on) and high efficiency ƽ Next generation enhanced body diode technol- ogy, engineered for soft recovery S S S G DFN5x6-8(PDFNWB5x6-8L) D D D D Ƶ Absolute Maximum Ratings (TA = 25ć unless otherwise noted) Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS 150 V VGS ±20 Continuous Drain Current (Note 1) Pulsed Drain Current (Note 3) ID 4.4 A IDM 30 Single Pulse Avalanche Energy (Note 2) EAS 73 mJ Power Dissipation TC=25ć 50 PD W TA=25ć (Note 1) 2.