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2SK3901 - MOS Field Effect Transistor

Key Features

  • Low On-state resistance RDS(on)1 = 13mÙ MAX. (VGS = 10 V, ID = 30A) RDS(on)2 = 16.5 mÙ MAX. (VGS = 4.5 V, ID = 30A) Low C iss: C iss =1950 pF TYP. +0.2 5.28 -0.2 +0.2 8.7 -0.2 +0.2 4.57 +0.1 -0.2 1.27-0.1 +0.2 2.54 -0.2 15.25-+00..22 5.60 1.27+0.1 -0.1 0.1max 2.54+0.2 -0.2 5.08+0.1 -0.1 0.81+0.1 -0.1 2.54 0.4+0.2 -0.2 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TA=25 TC=25 Channe.

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SMD Type MOSFET MOS Field Effect Transistor 2SK3901 TO-263 Unit: mm +0.1 1.27 -0.1 Features Low On-state resistance RDS(on)1 = 13mÙ MAX. (VGS = 10 V, ID = 30A) RDS(on)2 = 16.5 mÙ MAX. (VGS = 4.5 V, ID = 30A) Low C iss: C iss =1950 pF TYP. +0.2 5.28 -0.2 +0.2 8.7 -0.2 +0.2 4.57 +0.1 -0.2 1.27-0.1 +0.2 2.54 -0.2 15.25-+00..22 5.60 1.27+0.1 -0.1 0.1max 2.54+0.2 -0.2 5.08+0.1 -0.1 0.81+0.1 -0.1 2.54 0.4+0.2 -0.2 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TA=25 TC=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Symbol Rating Unit VDSS 60 V VGSS 20 V ID 60 A Idp * 150 A 1.