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2SK3900 - MOS Field Effect Transistor

Features

  • Low On-state resistance RDS(on)1 = 8.0mÙ MAX. (VGS = 10 V, ID = 41A) RDS(on)2 = 10 mÙ MAX. (VGS = 4.5 V, ID = 41 A) Low C iss: C iss =3500 pF TYP. Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TA=25 TC=25 Channel temperature Storage temperature.
  • PW 10 s,Duty Cycle 1% Symbol VDSS VGSS ID Idp.
  • PD Tch Tstg TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm +0.1 1.27 -0.1 +0.2 2.54 -0.2 15.25-+00..22 5.60 +0.2.

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SMD Type MOSFET MOS Field Effect Transistor 2SK3900 Features Low On-state resistance RDS(on)1 = 8.0mÙ MAX. (VGS = 10 V, ID = 41A) RDS(on)2 = 10 mÙ MAX. (VGS = 4.5 V, ID = 41 A) Low C iss: C iss =3500 pF TYP. Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TA=25 TC=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Symbol VDSS VGSS ID Idp * PD Tch Tstg TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm +0.1 1.27 -0.1 +0.2 2.54 -0.2 15.25-+00..22 5.60 +0.2 8.7 -0.2 +0.2 5.28 -0.2 1.27+0.1 -0.1 0.1max 2.54+0.2 -0.2 5.08+0.1 -0.1 0.81+0.1 -0.1 2.54 0.4+0.2 -0.2 1 Gate 2 Drain 3 Source Rating Unit 60 V 20 V 82 A 246 A 1.
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