Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ƽ ESD Protected 2KV HBM
Absolute Maximum Ratings Ta=25
Parameter
Drain-Source Voltage
Gate-Source Voltage -Continuous
Drain Current
-Continuous ( Note:1)
-Pulsed
Power Dissipation (Note 1) Thermal Resistance. Junction- to-Ambient Junction Temperature Junction and Storage Temperature Range
Notes: 1. Device mounted on FR-4 PCB. Electrical Characteristics Ta = 25
Param.
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SMD Type
MOSFET N-Channel Enhancement MOSFET
6..
Features
Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ƽ ESD Protected 2KV HBM
Absolute Maximum Ratings Ta=25
Parameter
Drain-Source Voltage
Gate-Source Voltage -Continuous
Drain Current
-Continuous ( Note:1)
-Pulsed
Power Dissipation (Note 1) Thermal Resistance.Junction- to-Ambient Junction Temperature Junction and Storage Temperature Range
Notes: 1. Device mounted on FR-4 PCB.
Electrical Characteristics Ta = 25
Parameter Drain-Source Breakdown Voltage (Note.2)
Zero Gate Voltage Drain Current (Note.2)
Gate-Body Leakage Current
(Note.2)
Gate Threshold Voltage
(Note.2)
Static Drain-Source On-Resistance (Note.
2SK3040K Datasheet
