Datasheet4U Logo Datasheet4U.com

2SK3716 - MOS Field Effect Transistor

Key Features

  • Super low on-state resistance: RDS(on)1 = 6.5 mÙ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 9.1 mÙ MAX. (VGS = 4.5 V, ID = 30 A) Low Ciss: Ciss = 2700 pF TYP. Built-in gate protection diode Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TA=25 TC=25 Channel temperature Storage temperature.
  • PW 10 s,Duty Cycle 1% Symbol VDSS VGSS ID Idp.
  • PD Tch Tstg TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type MOSFICET MOS Field Effect Transistor 2SK3716 Features Super low on-state resistance: RDS(on)1 = 6.5 mÙ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 9.1 mÙ MAX. (VGS = 4.5 V, ID = 30 A) Low Ciss: Ciss = 2700 pF TYP. Built-in gate protection diode Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TA=25 TC=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Symbol VDSS VGSS ID Idp * PD Tch Tstg TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 +0.15 1.50 -0.15 +0.15 0.50 -0.15 +0.28 1.50 -0.1 0.80+0.1 -0.1 0.127 max 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 +0.2 9.70 -0.2 Rating Unit 40 V 20 V 60 A 240 A 1.0 W 84 150 -55 to +150 +0.25 2.65 -0.1 +0.15 5.55 -0.