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2SK3713 - MOS Field Effect Transistor

Key Features

  • Super high VGS(off): VGS(off) = 3.8 to 5.8 V Low Crss: Crss = 6.5 pF TYP. Low QG: QG = 25 nC TYP. Low on-state resistance: RDS(on) = 0.83 MAX. (VGS = 10 V, ID = 5 A) Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TA=25 TC=25 Channel temperature Storage temperature.
  • PW 10 s,Duty Cycle 1% TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm +0.1 1.27 -0.1 +0.2 2.54 -0.2 15.25-+00..22 5.60 +0.2 8.7 -0.2 +0.2 5.28 -0.2.

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SMD Type MOSFET MOS Field Effect Transistor 2SK3713 Features Super high VGS(off): VGS(off) = 3.8 to 5.8 V Low Crss: Crss = 6.5 pF TYP. Low QG: QG = 25 nC TYP. Low on-state resistance: RDS(on) = 0.83 MAX. (VGS = 10 V, ID = 5 A) Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TA=25 TC=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm +0.1 1.27 -0.1 +0.2 2.54 -0.2 15.25-+00..22 5.60 +0.2 8.7 -0.2 +0.2 5.28 -0.2 1.27+0.1 -0.1 0.1max 2.54+0.2 -0.2 5.08+0.1 -0.1 0.81+0.1 -0.1 2.54 0.4+0.2 -0.2 Symbol Rating Unit VDSS 600 V VGSS 30 V ID 10 A Idp * 35 A 1.