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2SK3435 - MOS Field Effect Transistor

Key Features

  • Super low on-state resistance: RDS(on)1 = 14m MAX. (VGS = 10 V, ID = 40A) RDS(on)2 =22 m MAX. (VGS = 4 V, ID = 40A) Low Ciss: Ciss =3200 pF TYP. Built-in gate protection diode Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature.
  • PW 10 s,Duty Cycle 1% TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm +0.1 1.27 -0.1 +0.2 2.54 -0.2 15.25-+00..22 5.60 +0.2 8.7 -0.2 +0.2.

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SMD Type MOSFET MOS Field Effect Transistor 2SK3435 Features Super low on-state resistance: RDS(on)1 = 14m MAX. (VGS = 10 V, ID = 40A) RDS(on)2 =22 m MAX. (VGS = 4 V, ID = 40A) Low Ciss: Ciss =3200 pF TYP. Built-in gate protection diode Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm +0.1 1.27 -0.1 +0.2 2.54 -0.2 15.25-+00..22 5.60 +0.2 8.7 -0.2 +0.2 5.28 -0.2 1.27+0.1 -0.1 0.1max 2.54+0.2 -0.2 5.08+0.1 -0.1 0.81+0.1 -0.1 2.54 0.4+0.2 -0.2 Symbol Rating Unit VDSS 60 V VGSS 20 V ID 80 A Idp * 320 A 84 PD W 1.