Datasheet4U Logo Datasheet4U.com

2SK2796S - Silicon N-Channel MOSFET

Key Features

  • Low on-resistance RDS = 0.12 typ. High speed switching +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +0.15 1.50 -0.15 +0.15 5.55 -0.15 0.80+0.1 -0.1 0.127 max 3.80 +0.25 2.65 -0.1 +0.15 0.50 -0.15 +0.28 1.50 -0.1 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Channel temperature Storage temperature.
  • P.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK2796S Silicon N-Channel MOSFET Hitachi Semiconductor
2SK2796 Silicon N Channel MOS FET Hitachi Semiconductor
2SK2796L Silicon N-Channel MOSFET Hitachi Semiconductor
2SK2796L N-Channel MOSFET INCHANGE
2SK2792 Switching Transistor Rohm

Other Datasheets by Kexin Semiconductor

Part Number Description
2SK2701A N-Channel MOSFET
2SK2731 N-Channel MOSFET
2SK2735S Silicon N-Channel MOSFET
2SK2033 N-Channel MOSFET
2SK2059S Silicon N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type Silicon N-Channel MOSFET 2SK2796S MOSFICET Features Low on-resistance RDS = 0.12 typ. High speed switching +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +0.15 1.50 -0.15 +0.15 5.55 -0.15 0.80+0.1 -0.1 0.127 max 3.80 +0.25 2.65 -0.1 +0.15 0.50 -0.15 +0.28 1.50 -0.1 2.3 4.60+0.15 -0.15 0.60+0.1 -0.