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2SK2701A - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 450 V.
  • ID = 7.0 A (VGS = 10V).
  • RDS(ON) ＜ 1.1Ω (VGS = 10V) TraMnOsiSsFtoErsT N-Channel MOSFET 2SK2701A TO-220F ±0.20 3.18±0.20 φ ±0.20 2.54 ±0.20 Unit: mm 0.70 ±0.20 6.68 ±0.20 15.87 ±0.20 3.30 ±0.20 12.42 ±0.20 1.47max 2.54typ 2.54typ 2.76 ±0.20 9.75 ±0.20 0.80 ±0.20 0.50 ±0.20.
  • Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS 450 V VGS ±30 Continuous Drain Current Pulsed Drain.

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DIP Type ■ Features ● VDS (V) = 450 V ● ID = 7.0 A (VGS = 10V) ● RDS(ON) ＜ 1.1Ω (VGS = 10V) TraMnOsiSsFtoErsT N-Channel MOSFET 2SK2701A TO-220F ±0.20 3.18±0.20 φ ±0.20 2.54 ±0.20 Unit: mm 0.70 ±0.20 6.68 ±0.20 15.87 ±0.20 3.30 ±0.20 12.42 ±0.20 1.47max 2.54typ 2.54typ 2.76 ±0.20 9.75 ±0.20 0.80 ±0.20 0.50 ±0.20 ■ Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS 450 V VGS ±30 Continuous Drain Current Pulsed Drain Current *1 Avalanche Energy *2 ID 7 A IDM 28 EAS 130 mJ Avalanche Current IAS 7 A Power Dissipation (TC=25℃) PD 35 W Junction Temperature Storage Temperature Range TJ 150 ℃ Tstg -55 to 150 *1: PW≤100µs, duty cycle≤1% *2: VDD = 30V, L = 5mH, IL = 7A, unclamped, RG = 50Ω.