Datasheet4U Logo Datasheet4U.com

2SK2110 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 100V.
  • ID = 0.5 A.
  • RDS(ON) ＜ 1.2Ω (VGS = 10V).
  • RDS(ON) ＜ 1.5Ω (VGS = 4V) 1.70 0.1 Drain (D) 0.42 0.1 0.46 0.1 Gate (G) Internal diode Gate protection diode Source (S) 1.Gate 2.Drain 3.Source.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Power Dissipation Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD TJ Tstg Rating 100 ±20 0.5 1.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK2110 N-Channel MOSFET NEC
2SK2110 N-CHANNEL MOSFET Renesas
2SK2110 100V N-Channel MOSFET VBsemi
2SK211 Silicon N-Channel MOSFET Toshiba Semiconductor
2SK211 N-channel MOSFET Xiao sheng Elctronic

Other Datasheets by Kexin Semiconductor

Part Number Description
2SK2111 MOS Field Effect Transistor
2SK2111-HF N-Channel MOSFET
2SK2112 N-Channel MOSFET
2SK2109 N-Channel MOSFET
2SK2133 MOS Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type N-Channel MOSFET 2SK2110 MOSFET ■ Features ● VDS (V) = 100V ● ID = 0.5 A ● RDS(ON) ＜ 1.2Ω (VGS = 10V) ● RDS(ON) ＜ 1.5Ω (VGS = 4V) 1.70 0.1 Drain (D) 0.42 0.1 0.46 0.1 Gate (G) Internal diode Gate protection diode Source (S) 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Power Dissipation Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD TJ Tstg Rating 100 ±20 0.5 1 2 150 -55 to 150 Note.