Low on-resistance Fast switching speed Low-voltage drive Easily designed drive circuits
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Channel temperature Storage temperature
TO-252
6.50+0.15 -0.15
5.30+0.2 -0.2
2.30+0.1 -0.1
0.50+0.8 -0.7
+0.15 1.50 -0.15
+0.15 0.50 -0.15
+0.28 1.50 -0.1
0.80+0.1 -0.1
0.127 max
2.3 4.60+0.15
-0.15
0.60+0.1 -0.1
+0.2 9.70 -0.2
Symbol
Rating
Unit
VDSS
60
V
VGSS
20
V
ID.
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SMD Type
Silicon N-Channel MOSFET 2SK2094
MOSFICET
Features
Low on-resistance Fast switching speed Low-voltage drive Easily designed drive circuits
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Channel temperature Storage temperature
TO-252
6.50+0.15 -0.15
5.30+0.2 -0.2
2.30+0.1 -0.1
0.50+0.8 -0.7
+0.15 1.50 -0.15
+0.15 0.50 -0.15
+0.28 1.50 -0.1
0.80+0.1 -0.1
0.127 max
2.3 4.60+0.15
-0.15
0.60+0.1 -0.1
+0.2 9.70 -0.2
Symbol
Rating
Unit
VDSS
60
V
VGSS
20
V
ID
2
A
Idp
8
A
PD
20
W
Tch
150
Tstg
-55 to +150
+0.25 2.65 -0.1
+0.15 5.55 -0.15
Unit: mm
1 Gate 2 Drain 3 Source
3.