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2SK1959 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 16V.
  • ID = 2A.
  • RDS(ON) ＜ 3.2Ω (VGS = 1.5V).
  • RDS(ON) ＜ 0.5Ω (VGS = 4V) Drain (D) Gate (G) Gate protection diode Source (S) Internal diode.
  • Absolute Maximum Ratings Ta = 25℃ 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Power Dissipation Junction Temperature Storage Temperature Range Symbol Rating Unit VDS 16 V VGS ±7 ID 2.

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SMD Type N-Channel MOSFET 2SK1959 MOSFET ■ Features ● VDS (V) = 16V ● ID = 2A ● RDS(ON) ＜ 3.2Ω (VGS = 1.5V) ● RDS(ON) ＜ 0.5Ω (VGS = 4V) Drain (D) Gate (G) Gate protection diode Source (S) Internal diode ■ Absolute Maximum Ratings Ta = 25℃ 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Power Dissipation Junction Temperature Storage Temperature Range Symbol Rating Unit VDS 16 V VGS ±7 ID 2 A IDM 4 PD 2 W TJ 150 ℃ Tstg -55 to 150 Note.