Datasheet4U Logo Datasheet4U.com

2SJ213 - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-100V.
  • ID =-0.5 A.
  • RDS(ON) ＜ 4.2Ω (VGS =-10V).
  • RDS(ON) ＜ 5Ω (VGS =-4V) 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Power Dissipation Junction Temperature Junction Storage Temperature Range Note.1: PW ≤ 10 ms, duty cycle ≤ 50%.
  • Electrical Characteristics Ta = 25℃ Symbol VDS VGS ID IDM PD TJ Tstg Rating.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SJ213 P-Channel MOSFET NEC
2SJ213 100V P-Channel MOSFET VBsemi
2SJ210 P-Channel MOSFET NEC
2SJ210 P-CHANNEL MOSFET FOR SWITCHING Renesas
2SJ210C P-CHANNEL MOSFET FOR SWITCHING Renesas

Other Datasheets by Kexin Semiconductor

Part Number Description
2SJ210 MOS Fied Effect Transistor
2SJ211 P-Channel MOSFET
2SJ212 P-Channel MOSFET
2SJ203 P-Channel MOSFET
2SJ204 P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type P-Channel MOSFET 2SJ213 MOSFET ■ Features ● VDS (V) =-100V ● ID =-0.5 A ● RDS(ON) ＜ 4.2Ω (VGS =-10V) ● RDS(ON) ＜ 5Ω (VGS =-4V) 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Power Dissipation Junction Temperature Junction Storage Temperature Range Note.1: PW ≤ 10 ms, duty cycle ≤ 50% ■ Electrical Characteristics Ta = 25℃ Symbol VDS VGS ID IDM PD TJ Tstg Rating -100 ±20 -0.