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2SJ212 - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-60V.
  • ID =-500m A.
  • RDS(ON) ＜ 3Ω (VGS =-10V).
  • RDS(ON) ＜ 4Ω (VGS =-4V) 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Power Dissipation Junction Temperature Junction Storage Temperature Range Note.1: PW ≤ 10ms,Duty Cycle ≤ 50% Symbol VDS VGS ID IDM PD TJ Tstg Rating -60 ±20 -0.5 -1 2 150 -55 to 150.
  • Elect.

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SMD Type P-Channel MOSFET 2SJ212 MOSFET ■ Features ● VDS (V) =-60V ● ID =-500m A ● RDS(ON) ＜ 3Ω (VGS =-10V) ● RDS(ON) ＜ 4Ω (VGS =-4V) 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Power Dissipation Junction Temperature Junction Storage Temperature Range Note.1: PW ≤ 10ms,Duty Cycle ≤ 50% Symbol VDS VGS ID IDM PD TJ Tstg Rating -60 ±20 -0.